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php125n06lt 4.pdf Principales características:

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Philips Semiconductors Product specification TrenchMOS transistor PHP125N06LT, PHB125N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 8 m (VGS = 5 V) g Low thermal resistance RDS(ON) 7 m (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using trench technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP125N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB125N06LT is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) SOT40

 

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