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PHP176NQ04T N-channel TrenchMOS standard level FET Rev. 02 6 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources 1.3 Applications DC-to-DC convertors Motors, lamps and solenoids General industrial applications Uninterruptible power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj 25 C; Tj 175 C - - 40 V ID drain current Tmb =25 C; VGS =10V; - - 75 A see Figure 1; see Figure 3 P

 

Keywords - ALL TRANSISTORS. Principales características

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