Todos los transistores

2sj542.pdf Principales características:

2SJ542 Silicon P Channel MOS FET REJ03G0889-0400 (Previous ADE-208-591B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 2SJ542 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 18 A D Drain peak current I Note 1 72 A D (pulse) Body to drain diode reverse drain current I 18 A DR Avalanche current I Note 3 18 A AP Avalanche energy E Note 3 27 mJ AR Channel dissipation Pch Note 2 60 W Channel temperature Tch 150 C

Keywords - ALL TRANSISTORS. Principales características

 2sj542.pdf Design, MOSFET, Power

 2sj542.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj542.pdf Database, Innovation, IC, Electricity