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2sj549.pdf Principales características:

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2SJ549(L), 2SJ549(S) Silicon P Channel MOS FET REJ03G0896-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK (L) ) (Package name LDPAK (S)-(1) ) D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Rev.4.00 Jun 05, 2006 page 1 of 8 2SJ549(L), 2SJ549(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 12 A Drain peak current ID (pulse) Note 1 48 A Body to drain diode reverse drain current IDR 12 A Avalanche current IAP Note 3 12 A Avalanche energy EAR Note 3 12 mJ Chan

 

Keywords - ALL TRANSISTORS. Principales características

 2sj549.pdf Design, MOSFET, Power

 2sj549.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj549.pdf Database, Innovation, IC, Electricity

 

 
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