r07ds0294ej rqj0302ngd.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

r07ds0294ej rqj0302ngd.pdf Principales características:

Preliminary Datasheet RQJ0302NGDQA R07DS0294EJ0500 (Previous REJ03G1271-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 138 m typ (VGS = 10 V, ID = 1.1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. Source 2 2. Gate 1 3. Drain 2 S 1 Note Marking is NG . Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS +10 / 20 V Drain current ID 2.2 A Drain peak current ID(Pulse) Note1 5 A Body - drain diode reverse drain current IDR 2.2 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, duty