r07ds0296ej rqj0304dqd.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

r07ds0296ej rqj0304dqd.pdf Principales características:

Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0200 (Previous REJ03G1717-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 2 1. Source G 1 2. Gate 3. Drain 2 S 1 Notes Marking is "DQ". Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS +8 / 12 V Drain current ID 1.8 A Drain peak current ID(pulse) Note1 8 A Body - drain diode reverse drain current IDR 1.8 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, Duty cycle 1%