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r07ds0298ej rqj0306fqd.pdf Principales características:

Preliminary Datasheet RQJ0306FQDQA R07DS0298EJ0200 (Previous REJ03G1719-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 2 1. Source G 1 2. Gate 3. Drain 2 S 1 Notes Marking is "FQ". Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS +8 / 12 V Drain current ID 3 A Drain peak current ID(pulse) Note1 12 A Body - drain diode reverse drain current IDR 3 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, Duty cycle 1%

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 r07ds0298ej rqj0306fqd.pdf Design, MOSFET, Power

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