r07ds0308ej rqk0604igd.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

r07ds0308ej rqk0604igd.pdf Principales características:

Preliminary Datasheet RQK0604IGDQA R07DS0308EJ0200 (Previous REJ03G1496-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 111 m typ.(at VGS = 4.5 V, ID = 1 A) Low drive current High speed switching VDSS 60 V and capable of 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 2 1. Source G 1 2. Gate 3. Drain 2 S 1 Note Marking is IG . Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 12 V Drain current ID 2 A Drain peak current ID(pulse) Note1 8 A Body - drain diode reverse drain current IDR 2 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, Duty