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2sj413.pdf Principales características:

2sj4132sj413

Ordering number ENN5366A P-Channel Silicon MOSFET 2SJ413 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2076B Low-voltage drive. [2SJ413] Micaless package facilitating mounting. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1 Gate 2 Drain 3 Source 5.45 5.45 SANYO TO-3PML Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 50 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 200 A 3.0 W Allowable Power Dissipation PD Tc=25 C 70 W Channel Temperature Tch 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Drain

 

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 2sj413.pdf Design, MOSFET, Power

 2sj413.pdf RoHS Compliant, Service, Triacs, Semiconductor

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