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2sk1906.pdf Principales características:

Ordering number EN4225 N-Channel Silicon MOSFET 2SK1906 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1906] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO-220ML Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 15 V Drain Current (DC) ID 20 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 80 A 2.0 W Allowable Power Dissipation PD Tc=25 C 30 W C Channel Temperature Tch 150 Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max

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 2sk1906.pdf Design, MOSFET, Power

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