2sk4117ls.pdf Principales características:
Ordering number ENA0791A 2SK4117LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4117LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS 30 V IDc*1 Limited only by maximum temperature 15 A Drain Current (DC) IDpack*2 Tc=25 C (SANYO s ideal heat dissipation condition)*3 10.4 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 47 A 2.0 W Allowable Power Dissipation PD Tc=25 C (SANYO s ideal heat dissipation condition)*3 35 W Channel Temperature Tch 150 C Storage Tem
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2sk4117ls.pdf Design, MOSFET, Power
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