ech8671.pdf datasheet:

ECH8671 Ordering number ENA1456 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8671 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --3.5 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% --30 A Allowable Power Dissipation PD When mounted on ceramic substrate (1200mm2 0.8mm) 1unit 1.3 W Total Power Dissipation PT When mounted on ceramic substrate (1200mm2 0.8mm) 1.5 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Sourc