Todos los transistores

 

st2sc1383 st2sc1384.pdf Principales características:

st2sc1383_st2sc1384st2sc1383_st2sc1384

ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage 2SC1383 30 VCBO V 2SC1384 60 Collector Emitter Voltage 2SC1383 25 VCEO V 2SC1384 50 Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICP 1.5 A Power Dissipation Ptot 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg - 55 to + 150 Characteristics at Ta = 25 Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 10 V, IC = 500 mA Current Gain Group Q hFE 85 - 170 - R hFE 120 - 240 - S

 

Keywords - ALL TRANSISTORS. Principales características

 st2sc1383 st2sc1384.pdf Design, MOSFET, Power

 st2sc1383 st2sc1384.pdf RoHS Compliant, Service, Triacs, Semiconductor

 st2sc1383 st2sc1384.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.