ssf7ns65uf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ssf7ns65uf.pdf Principales características:

SSF7NS65UF Main Product Characteristics VDSS 650V RDS(on) 0.6 (typ.) ID 7A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF7NS65UF series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating Symbol Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V 7 C I @ TC = 100 Continuous Drain Current, V @ 10V 5 A C D GS I Pulsed Drain Current 28 DM Power Dissipation 33 W P @TC = 25 C D Linear Derating Factor 0