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SSF8N80F Main Product Characteristics VDSS 800V RDS(on) 1.3 (typ.) ID 8A TO-220F Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating temperature Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating Symbol Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V 8 C I @ TC =

 

Keywords - ALL TRANSISTORS. Principales características

 ssf8n80f.pdf Design, MOSFET, Power

 ssf8n80f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ssf8n80f.pdf Database, Innovation, IC, Electricity

 

 
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