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fw26025a1.pdf Principales características:

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FW26025A1 PNP POWER DARLINGTON TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington 2 configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low TO-3 frequency switching applications. INTERNAL SCHEMATIC DIAGRAM R Typ. = 8 K R Typ. = 60 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 20 A I Collector Peak Current 40 A CM IB Base Current 0.5 A Ptot Total Dissipation at Tc 25 oC 160 W o T Storage Temperature -65 to 200 C stg o Tj Max. Operating Junction Temperature 200 C 1/4

 

Keywords - ALL TRANSISTORS. Principales características

 fw26025a1.pdf Design, MOSFET, Power

 fw26025a1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fw26025a1.pdf Database, Innovation, IC, Electricity

 

 
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