Todos los transistores

stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf Principales características:

STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 11 A I PAK TO-220 STD12NM50N 550 V 0.38 11 A 3 1 STI12NM50N 550 V 0.38 11 A DPAK STF12NM50N 550 V 0.38 11 A (1) STP12NM50N 550 V 0.38 11 A 3 3 2 1 1 100% avalanche tested D PAK TO-220FP Low input capacitance and gate charge Low gate input resistance Application Figure 1. Internal schematic diagram Switching applications Description This series of devices is realized with the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and gat

Keywords - ALL TRANSISTORS. Principales características

 stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf Design, MOSFET, Power

 stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf Database, Innovation, IC, Electricity