Todos los transistores

2sd1160.pdf Principales características:

2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1160 Switching Applications Unit mm Suitable for Motor Drive Applications High DC current gain Low saturation voltage V = 0.6 V (max) (I = 2A, I = 40 mA) CE (sat) C B Built-in free wheel diode Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V DC IC 2 Collector current A Pulse ICP 4 Diode forward surge current (t = 1 s) IFP 1 A Ta = 25 C 1 Collector power PC W JEDEC dissipation Tc = 25 C 10 JEITA Junction temperature Tj 150 C TOSHIBA 2-7B1A Storage temperature range Tstg -55 to 150 C Weight 0.36 g (typ.) Equivalent Circuit COLLECTOR BASE 800 EMITTER 1 2002-07-23 2SD1160 Electrical Characteristics (Ta =

Keywords - ALL TRANSISTORS. Principales características

 2sd1160.pdf Design, MOSFET, Power

 2sd1160.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd1160.pdf Database, Innovation, IC, Electricity