Todos los transistores

2sd1407a.pdf Principales características:

2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit mm High breakdown voltage VCEO = 100 V Low collector saturation voltage VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Base current IB 0.5 A Collector power dissipation PC 30 W (Tc = 25 C) JEDEC Junction temperature Tj 150 C JEITA Storage temperature range Tstg -55 to 150 C TOSHIBA 2-10R1A Note Using continuously under heavy loads (e.g. the application of high Weight 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrea

Keywords - ALL TRANSISTORS. Principales características

 2sd1407a.pdf Design, MOSFET, Power

 2sd1407a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd1407a.pdf Database, Innovation, IC, Electricity