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2sk3906.pdf Principales características:

2sk39062sk3906

2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II -MOS VI) 2SK3906 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Fast reverse recovery time trr = 400 ns (typ.) Low drain-source ON-resistance RDS (ON) = 0.27 (typ.) High forward transfer admittance Yfs = 15S (typ.) Low leakage current IDSS = 500 A (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k ) VDGR 600 V Gate-source voltage VGSS 30 V 1. Gate 2. Drain(heat sink) DC (Note 1) ID 20 3. Source Drain current A Pulse (Note 1) IDP 80 JEDEC Drain power dissipation (Tc = 25 C) PD 150 W JEITA SC-65 Single-pulse avalanche energy EAS 792 mJ

 

Keywords - ALL TRANSISTORS. Principales características

 2sk3906.pdf Design, MOSFET, Power

 2sk3906.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk3906.pdf Database, Innovation, IC, Electricity

 

 
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