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gb100da60up.pdf Principales características:

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GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY BENEFITS VCES 600 V Designed for increased operating efficiency in power conversion UPS, SMPS, welding, induction heating IC DC 100 A at 61 C Easy to assemble and parallel VCE(on) typical at 100 A, 25 C 2.4 V Direct mounting to heatsink IF DC 100 A at 85 C Plug-in compatible with other SOT-227 packages Higher switching frequency up to 150 kHz Lower conduction losses and

 

Keywords - ALL TRANSISTORS. Principales características

 gb100da60up.pdf Design, MOSFET, Power

 gb100da60up.pdf RoHS Compliant, Service, Triacs, Semiconductor

 gb100da60up.pdf Database, Innovation, IC, Electricity

 

 
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