sihp25n40d.pdf datasheet:

SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.17 - Low Input Capacitance (Ciss) Qg max. (nC) 88 - Reduced Capacitive Switching Losses Qgs (nC) 12 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 23 Optimal Efficiency and Operation Configuration Single - Low Cost D - Simple Gate Drive Circuitry TO-220AB - Low Figure-of-Merit (FOM) Ron x Qg - Fast Switching Compliant to RoHS Directive 2011/65/EU Note G * Pb containing terminations are not RoHS compliant, exemptions may apply S D G APPLICATIONS S Consumer Electronics N-Channel MOSFET - Displays (LCD or Plasma TV) Lighting Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers