16n50.pdf datasheet:

GOFORD16N50500V N-Channel MOSFETGENERAL DESCRIPTIONVDSS RDS(ON) IDThis Power MOSFET is produced usingadvanced planar stripe DMOS technology.500V 0.38 16AThis advanced technology has beenespecially tailored to minimize on-stateresistance, provide superior switchingperformance, and withstand high energypulse in the avalanche and commutationmode. These devices are well suited for highefficiency switched mode power supplies,active power factor correction based on halfbridge topology.Features16A, 500V, RDS(on) = 0.38 @VGS = 10 V Ordering Information Low gate charge ( typical 45nC)PART NUMBER PACKAGE BRAND Fast switching 100% avalanche tested16N50 TO-220 0GFD Improved dv/dt capabilityHTTP://www.gofordsemi.com TEL0755-29 961262 FAX0755-29961466 Page 1GOFORD16N50Absolute Maximum Ratings TC = 25Cunless otherwi