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2n3716.pdf datasheet:

2n37162n3716

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3716 DESCRIPTION With TO-3 package APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 4 APD Total Power Dissipation TC=25 150 W Tj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNITRth j-c Thermal resistance junction to case 1.17 /W INCHANGE SEMICONDUCTORInchange Semiconductor Product Specificat

 

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 2n3716.pdf Design, MOSFET, Power

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 2n3716.pdf Database, Innovation, IC, Electricity

 

 
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