2n4898 2n4899 2n4900.pdf datasheet:

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT2N4898 -40VCBO Collector-base voltage 2N4899 Open emitter -60 V 2N4900 -80 2N4898 -40VCEO Collector-emitter voltage 2N4899 Open base -60 V 2N4900 -80 VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.0 A ICM Collector current-peak -4.0 AIB Base current -1.0 APD Total Power Dissipation TC=25 25 WTj Junction temperature 150 Tstg S