2n4903.pdf datasheet:

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4903 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- : hFE= 20-80 @IC= -1A Complement to Type 2N5069 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V V Collector-Emitter Voltage -80 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current-Continuous -5 A I Collector Current-Peak -10 A CMI Base Current-Continuous -1 A BP Collector Power Dissipation@T =25 87.5 W C CT Junction Temperature 200 JTstg Storage Temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 /W isc Website