2n4909.pdf datasheet:

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4909 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V V Collector-Emitter Voltage -80 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current-Continuous -10 A I Base Current-Continuous -4 A BP Collector Power Dissipation@T =25 150 W C CT Junction Temperature 200 JTstg Storage Temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specificati