2n4923.pdf datasheet:

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR 2N4923TO-126ECBGeneral Purpose Power TransistorABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)DESCRIPTION VALUE UNITCollector -Base Voltage VCBO 80 VCollector -Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5.0 VCollector Current Continuous IC 3.0 ABase Current IB 1.0 APower Dissipation @ Tc=25 deg C PD 30 WDerate Above 25 deg C 0.24 W/deg COperating And Storage Junction Tj, Tstg -65 to +150 deg CTemperature RangeLead Temperature for Soldering 1/16" TL 260 deg Cfrom Body for 10 Seconds.Thermal ResistanceJunction to Case Rth (j-c) 4.16 deg C/WELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITCollector -Emitter Sustaining Voltage VCEO(sus) IC=100mA, IB=0 80