2n5020 2n5021.pdf datasheet:

Databook.fxp 1/13/99 2:09 PM Page B-18B-18 01/992N5020, 2N5021P-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Analog SwitchesReverse Gate Source & Reverse Gate Drain Voltage 50 VContinuous Forward Gate Current 50 mAContinuous Device Power Dissipation 500 mWPower Derating 4 mW/CStorage Temperature Range 65C to + 200CAt 25C free air temperature: 2N5020 2N5021 Process PJ32Static Electrical Characteristics Min Max Min Max Unit Test ConditionsGate Source Breakdown Voltage V(BR)GDO 25 25 V IG = 1A, VDS = VGate Reverse Current IGSS 11 nA VGS = 15V, VDS = VGate Source Cutoff Voltage VGS(OFF) 0.3 1.5 0.5 2.5 V VDS = 15V, ID = 1 nADrain Saturation Current (Pulsed) IDSS 0.3 1.2 1 3.5 mA VDS = 15V, VGS = VDynamic Electrical CharacteristicsCommon Source gfs 1 3.5 1.5 6 m