2n5038.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5038DESCRIPTIONHigh Speed-t = 0.5s (Max)fLow Saturation Voltage-V 2.5V@ I = 20ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust devicePerformance and reliable operation.APPLICATIONSDesigned for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial andcommercial applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Base Voltage 150 VCBOV Collector-Emitter Voltage 90 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 20 ACI Base Current-Continuous 5 ABP Collector Power Dissipation @T =25 140 WC CT Junction Temperature 200 JStorage Temperature Range -65~200 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resista