2n6109.pdf datasheet:

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6109DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -50 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -7 ACI Collector Current-Peak -10 ACMI Base Current -3 ABCollector Power DissipationP 40 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance, Junction to Case 3.125 /Wth