2n6322.pdf datasheet:

isc Silicon NPN Power Transistor 2N6322DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and high-speed switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 300 VCBOV Collector-Emitter Voltage 200 VCEOV Emitter-Base voltage 5 VEBOI Collector Current-Continuous 30 ACI Base Current-Continuous 10 ABCollector Power DissipationP 200 WC@ T =25CT Junction Temperature 200 JStorage Temperature Range -65~200 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 0.5 /WRth j-c1isc websitewww.iscsemi.com isc & i