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2n6449 2n6450.pdf datasheet:

2n6449_2n6450

Databook.fxp 1/13/99 2:09 PM Page B-24B-24 01/992N6449, 2N6450N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C High Voltage2N6449 2N6450Reverse Gate Source Voltage 300 V 200 VReverse Gate Drain Voltage 300 V 200 VContinuous Forward Gate Current 10 mA 10 mAContinuous Device Power Dissipation 800 mW 800 mWPower Derating 6.4 mW/C 6.4 mW/CAt 25C free air temperature: 2N6449 2N6450 Process NJ42Static Electrical Characteristics Min Max Min Max Unit Test ConditionsGate Source Breakdown Voltage V(BR)GSS 300 200 V IG = 10 A, VDS = V 100 nA VGS = 150V, VDS = V 100 nA VGS = 100V, VDS = VGate Reverse Current IGSS 100 A VGS = 150V, VDS = V TA = 150C 100 A VGS = 100V, VDS = V TA = 150CGate Source Cutoff Voltage VGS(OFF) 2 15

 

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