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2n6453 2n6454.pdf datasheet:

2n6453_2n6454

Databook.fxp 1/13/99 2:09 PM Page B-26B-26 01/992N6453, 2N6454N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio Amplifiers2N6453 2N6454 Low-Noise, High GainReverse Gate Source Voltage 20 V 25 VAmplifiersReverse Gate Drain Voltage 20 V 25 VContinuous Forward Gate Current 10 mA 10 mA Low-Noise PreamplifiersContinuous Device Power Dissipation 360 mW 360 mWPower Derating 2.88 mW/C 2.88 mW/CAt 25C free air temperature: 2N6453 2N6454 Process NJ132LStatic Electrical Characteristics Min Max Min Max Unit Test ConditionsGate Source Breakdown Voltage V(BR)GSS 20 25 V IG = 1 A, VDS = V 0.1 nA VGS = 10V, VDS = V 0.5 nA VGS = 15V, VDS = VGate Reverse Current IGSS 0.2 A VGS = 10V, VDS = V TA = 125C 1 A VGS = 15V, VDS = V TA = 1

 

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