2n7002k.pdf datasheet:

2N7002KSEMICONDUCTORN Channel MOSFETTECHNICAL DATAESD Protected 2000VINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LESD Protected 2000V.DIM MILLIMETERSHigh density cell design for low RDS(ON)._A +2.93 0.20B 1.30+0.20/-0.15Voltage controlled small signal switch.C 1.30 MAX23Rugged and reliable.D 0.45+0.15/-0.05E 2.40+0.30/-0.20High saturation current capablity. 1G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10P PL 0.55M 0.20 MINN 1.00+0.20/-0.10MAXIMUM RATING (Ta=25 )P 7CHARACTERISTIC SYMBOL RATING UNITMVDSSDrain-Source Voltage 60 V1. SOURCEVGSSGate-Source Voltage V202. GATE3. DRAINIDContinuous 300Drain Current mAIDPPulsed (Note 1) 1200PDDrain Power Dissipation (Note 2) 300 mWSOT-23TjJunction Temperature 150Tstg -55 150Storage Temperature RangeNote 1) Pulse Width 10 , Duty Cycle