2sa1810.pdf datasheet:

2SA1810Silicon PNP EpitaxialApplicationHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 300 MHz typ High voltage and low output capacitanceVCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifierOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SA1810Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 5 VCollector current IC 0.2 ACollector peak current IC(peak) 0.5 ACollector power dissipation PC 1.25 WPC*1 10Junction temperature Tj 150 CStorage temperature Tstg 55 to +150 CNote: 1. Value at TC = 25 C.Electrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsCollector to base breakdown V(BR)CBO 200