2sa1813.pdf datasheet:

SMD Type TransistorsPNP Transistors2SA1813 Features High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage High VEBO1 Base2 Emitter3 Colletor Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -15 Collector Current - Continuous IC -150mA Collector Current - Pulse ICM -300 Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA RBE= -25 V Emitter - base breakdown voltage VEBO IE= -100 uA IC=0 -15 Collector-bas