2sa921.pdf datasheet:

Transistor2SA921Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SC19805.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V+0.2 +0.2Collector to emitter voltage VCEO 120 V 0.45 0.1 0.45 0.11.27 1.27Emitter to base voltage VEBO 5 VPeak collector current ICP 50 mACollector current IC 20 mA1 2 31:EmitterCollector power dissipation PC 250 mW 2:Collector3:Base2.54 0.15Junction temperature Tj 150 CJEDEC:TO92Storage temperature Tstg 55 ~ +150 C EIAJ:SC43AElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitICBO VCB = 50V, IE = 0 100 nACollector cutoff currentICEO VCE =