2sc1212.pdf datasheet:

isc Silicon NPN Power Transistor 2SC1212DESCRIPTIONHigh Collector Current I = 1ACCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBOV Collector-Emitter Voltage 50 VCEOV Emitter-Base Voltage 4 VEBOI Collector Current-Continuous 1 ACCollector Power Dissipation8@ T =25CP WCCollector Power Dissipation0.75@ T =25aT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SC1212ELECTRICAL CHARACTERISTICST =25 u

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