2sc1214.pdf datasheet:

2SC1214Silicon NPN EpitaxialADE-208-1050 (Z)1st. EditionMar. 2001ApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1214Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 4VCollector current IC 500 mACollector power dissipation PC 600 mWJunction temperature Tj 150 CStorage temperature Tstg 55 to +150 CElectrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsCollector to base breakdown V(BR)CBO 50 V IC = 10 A, IE = 0voltageCollector to emitter breakdown V(BR)CEO 50 V IC = 1 mA, RBE = voltageEmitter to base breakdown V(BR)EBO 4 V IE = 10 A, IC = 0voltageCollector cutoff current ICBO 0.5 A VCB = 20 V,