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2sc1215 e.pdf datasheet:

2sc1215_e2sc1215_e

Transistor2SC1215Silicon NPN epitaxial planer typeFor high-frequency (VHF band) amplification and oscillationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3 VCollector current IC 50 mA1 2 31:EmitterCollector power dissipation PC 400 mW2:Collector3:Base2.54 0.15Junction temperature Tj 150 CJEDEC:TO92Storage temperature Tstg 55 ~ +150 CEIAJ:SC43AElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitCollector to base voltage VCBO IC =100 A, IE = 0 30 VEmitter to base voltage VEBO IE = 10 A, IC = 0 3 VForward current transfer ratio hFE VCB = 10V, IE = 2mA 25

 

Keywords - ALL TRANSISTORS DATASHEET

 2sc1215 e.pdf Design, MOSFET, Power

 2sc1215 e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1215 e.pdf Database, Innovation, IC, Electricity

 

 
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