2sc1227.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1227DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor clocked voltage convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 300 VCBOV Collector-Emitter Voltage 200 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 10 ACCollector Power DissipationP 100 WCT Junction Temperature 150 JT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance, Junction to Case 1.25 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1227