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2sc1235.pdf datasheet:

2sc12352sc1235

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1235DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in lined-operated color TV chroma outputcircuits and sound output circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 300 VCBOV Collector-Emitter Voltage 300 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 0.1 ACCollector Power DissipationP 6.5 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance, Junction to Case 19.23 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconduc

 

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