2sc1251.pdf datasheet:

2SC1251NPN SILICON RF POWER TRANSISTORDESCRIPTION:The 2SC1251 is a Common EmitterDevice Designed for High LinearityClass A Amplifiers up to 2.0 GHz.PACKAGE STYLE .204 4L STUDFEATURES INCLUDE: Direct Replacement for NE74020 High Gain - 10 dB min. @ 1.0 GHz Gold MetalizationMAXIMUM RATINGSIC 300 mAVCB 45 VPDISS 5.3W @ TC = 25 OCTJ -65 OC to +200 OCTSTG -65 OC to +150 OC1 = COLLECTOR 2 & 4 = EMITTER3 = BASE33 OC/WJCCHARACTERISTICS TC = 25 OCSYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITSBVCEO IC = 10 mA 25 VBVCBO IC = 10 mA 45 VBVEBO IE = 1.0 mA 3.0 VhFE VCE = 5.0 V IC = 100 mA 20 200 ---COB VCB = 15 V f = 1.0 MHz 3.0 pFVCE = 15 V IC = 100 mA POUT = 0.5 W 13 dBPGP1dB f = 1000 MHz +27 +29 dBmA D V A N C E D S E M I C O N D U C T O R, I N C. REV. A7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605