2sc1317 2sc1318.pdf datasheet:
Transistors2SC1317, 2SC1318Silicon NPN epitaxial planer typeUnit: mmFor low-frequency power amplification and driver amplification 5.00.2 4.00.2Complementary to 2SA719 and 2SA720 Features0.70.1 Low collector to emitter saturation voltage VCE(sat) Complementary pair with 2SA719 and 2SA720 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit 0.45+0.150.10.45+0.150.12SC1317 VCBO 30 V (1.27) (1.27)Collector tobase voltage2SC1318 601: Emitter1 322SC1317 VCEO 25 VCollector to2: Collectoremitter voltage 3: Base2SC1318 502.540.15TO-92 PackageEmitter to base voltage VEBO 7VPeak collector current ICP 1ACollector current IC 500 mACollector power dissipation PC 625 mWJunction temperature Tj 150 CStorage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3CParameter Sym
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2sc1317 2sc1318.pdf Design, MOSFET, Power
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