2sc1317 e.pdf datasheet:
Transistor2SC1317, 2SC1318Silicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SA719 and 2SA7205.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SA719 and 2SA720.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SC1317 30VCBO V+0.2 +0.2base voltage 2SC1318 60 0.45 0.1 0.45 0.11.27 1.27Collector to 2SC1317 25VCEO Vemitter voltage 2SC1318 50Emitter to base voltage VEBO 7 V1 2 31:EmitterPeak collector current ICP 1 A 2:Collector3:Base2.54 0.15Collector current IC 500 mAJEDEC:TO92EIAJ:SC43ACollector power dissipation PC 625 mWJunction temperature Tj 150 CStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions m
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