2sc1325.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1325DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor large screen color deflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 600 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 6 ACCollector Power DissipationP 80 WCT Junction Temperature -65~200 JT Storage Temperature Range -65~200 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance, Junction to Case 2.187 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Tra