2sc1348.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1348DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBOV Collector-Emitter Voltage 500 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 4 ACCollector Power DissipationP 125 WCT Junction Temperature -65~200 JT Storage Temperature Range -65~200 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance, Junction to Case 1.4 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Powe