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2sc1360 e.pdf datasheet:

2sc1360_e2sc1360_e

Transistor2SC1360, 2SC1360ASilicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Large collector power dissipation PC.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to 2SC1360 50VCBO Vbase voltage 2SC1360A 60Collector to 2SC1360 45VCEO V+0.2 +0.2emitter voltage 2SC1360A 600.450.1 0.450.11.27 1.27Emitter to base voltage VEBO 4 V1:EmitterCollector current IC 50 mA 2:Collector1 2 33:BaseCollector power dissipation PC 1 WEIAJ:SC51Junction temperature Tj 150 C TO92L PackageStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitCollector cutoff current ICBO VCB = 20V, IE = 0 100 nACollector to base 2SC136

 

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