2sc1368.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1368DESCRIPTIONHigh Collector Current I = 1.5ACCollector-Emitter Breakdown Voltage-: V = 25V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 25 VCBOV Collector-Emitter Voltage 25 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 1.5 ACCollector Power Dissipation8@ T =25CP WCCollector Power Dissipation0.75@ T =25aT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductori